A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

被引：37

作者：

Htay, Myo Than ^{[1
]}

Hashimoto, Yoshio ^{[1
]}

Momose, Noritaka ^{[2
]}

Sasaki, Kouichi ^{[1
]}

Ishiguchi, Hiroshi ^{[1
]}

Igarashi, Shigeo ^{[1
]}

Sakurai, Kazuki ^{[1
]}

Ito, Kentaro ^{[1
]}

机构：

[1] Shinshu Univ, Fac Engn, Dept Elect & Elect Engn, Nagano 3808553, Japan

[2] Nagano Natl Coll Technol, Dept Elect & Elect Engn, Nagano 3818550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 03期

关键词：

THIN-FILMS; PRECURSORS; ABSORBER; ZNO;

D O I：

10.1143/JJAP.50.032301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A cadmium-free Cu2ZnSnS4/ZnO hetrojunction solar cell with conversion efficiency of 4.29% has been obtained. The Cu2ZnSnS4 absorber film was formed utilizing sulfurization of laminated metallic precursors, and the ZnO buffer layer was then deposited on it by ultrasonic spray pyrolysis. In comparison with a conventional Cu2ZnSnS4/CdS hetrojunction solar cell, the open circuit voltage as well as the relative quantum efficiency at the short-wavelength regions was increased. The in-plane homogeneity of p-n junction was improved by depositing the ZnO layer on Cu2ZnSnS4 film via ultrasonic spray pyrolysis. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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