Analysis of gallium nitride growth by gas-source molecular beam epitaxy

被引：7

作者：

Karpov, SY

Makarov, YN

Ramm, MS

Talalaev, RA

机构：

[1] Ctr Adv Technol, St Petersburg 194156, Russia

[2] Univ Erlangen Nurnberg, Dept Fluid Mech, D-91058 Erlangen, Germany

[3] AF Ioffe Phys Tech Inst, Russian Acad Sci, St Petersburg 194021, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 187卷 / 3-4期

关键词：

GaN; ammonia; gas source molecular beam epitaxy; growth rate;

D O I：

10.1016/S0022-0248(98)00005-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For analysis of GaN growth by molecular beam epitaxy using atomic gallium and molecular ammonia sources a quasi-thermodynamic model accounting for kinetics of molecular nitrogen evaporation is applied. Growth rate and vapor-phase composition (partial pressures of desorbed species) as a function of temperature and incident gallium and ammonia fluxes are calculated The theoretical results are compared to the available experimental data. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：397 / 401

页数：5

共 14 条

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AVERYANOVA, 1996, INTERNET MRS J NITRI, V1

[2] Analysis of vaporization kinetics of group-III nitrides [J].