CRYSTAL-GROWTH OF GALLIUM NITRIDE

[1] ADDAMIANO A, 1962, J ELECTROCHEM SOC, V108, P1072

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355

[3] GROWTH OF GAN THIN-FILMS FROM TRIETHYLGALLIUM MONAMINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1273 - 1275

[4] AOKI M, 1978, SOGO SHIKENSKO NENPO, V37, P8

[5] AOKI M, 1979, 5 U TOK FAC ENG RES

[6] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 761 - &

[7] THE CHEMICAL PREPARATION OF GALLIUM NITRIDE LAYERS AT LOW-TEMPERATURES [J]. JOURNAL OF MATERIALS SCIENCE, 1980, 15 (12) : 3003 - 3009

[8] DEPOSITION OF GROUP-III NITRIDES ON SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1979, 59 (01) : 25 - 31

[9] PRESSURE AND TEMPERATURE DEPENDENCE OF ABSORPTION EDGE IN GAN [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4438 - +

[10] CARIN R, 1982, VIDE COUCHES MINCE S, V212, P157

[1] ADDAMIANO A, 1962, J ELECTROCHEM SOC, V108, P1072

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355

[3] GROWTH OF GAN THIN-FILMS FROM TRIETHYLGALLIUM MONAMINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1273 - 1275

[4] AOKI M, 1978, SOGO SHIKENSKO NENPO, V37, P8

[5] AOKI M, 1979, 5 U TOK FAC ENG RES

[6] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 761 - &

[7] THE CHEMICAL PREPARATION OF GALLIUM NITRIDE LAYERS AT LOW-TEMPERATURES [J]. JOURNAL OF MATERIALS SCIENCE, 1980, 15 (12) : 3003 - 3009

[8] DEPOSITION OF GROUP-III NITRIDES ON SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1979, 59 (01) : 25 - 31

[9] PRESSURE AND TEMPERATURE DEPENDENCE OF ABSORPTION EDGE IN GAN [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4438 - +

[10] CARIN R, 1982, VIDE COUCHES MINCE S, V212, P157