Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires

被引：17

作者：

Du Pasquier, Aurelien

Mastrogiovanni, Daniel D. T.

Klein, Lauren A.

Wang, Tong

Garfunkel, Eric

机构：

[1] Rutgers State Univ, Dept Mat Sci & Engn, N Brunswick, NJ 08902 USA

[2] Rutgers State Univ, Dept Chem & Chem Biol, Piscataway, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2801554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 mu m on SiO2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed. (C) 2007 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 27 条

[1] InGaP/GaAs/Ge multi-junction solar cell efficiency improvements using epitaxial germanium [J].

Aiken, DJ .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :994-997

[2] The potential of III-V semiconductors as terrestrial photovoltaic devices [J].

Bosi, Matteo ;

Pelosi, Claudio .

PROGRESS IN PHOTOVOLTAICS, 2007, 15 (01) :51-68

[3] The influence of materials work function on the open circuit voltage of plastic solar cells [J].

Brabec, CJ ;

Cravino, A ;

Meissner, D ;

Sariciftci, NS ;

Rispens, MT ;

Sanchez, L ;

Hummelen, JC ;

Fromherz, T .

THIN SOLID FILMS, 2002, 403 :368-372

[4] Influence of nanomorphology on the photovoltaic action of polymer-fullerene composites [J].

Chirvase, D ;

Parisi, J ;

Hummelen, JC ;

Dyakonov, V .

NANOTECHNOLOGY, 2004, 15 (09) :1317-1323

[5] Measurement of silicon and GaAs/Ge solar cell device parameters [J].

Deshmukh, MP ;

Nagaraju, J .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2005, 89 (04) :403-408

[6] Ge concentrator cells for III-V multijunction devices [J].

Friedman, DJ ;

Olson, JM ;

Ward, S ;

Moriarty, T ;

Emery, K ;

Kurtz, S ;

Duda, A ;

King, RR ;

Cotal, HL ;

Lillington, DR ;

Ermer, JH ;

Karam, NH .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :965-967

[7] Triple-junction GaInP/GaAs/Ge solar cells - Production status, qualification results and operational benefits [J].

Granata, JE ;

Ermer, JH ;

Hebert, P ;

Haddad, M ;

King, RR ;

Krut, DD ;

Lovelady, J ;

Gillanders, MS ;

Karam, NH ;

Cavicchi, BT .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :1181-1184

[8] Solar cell efficiency tables (Version 30) [J].

Green, Martin A. ;

Emery, Keith ;

Hisikawa, Yoshihiro ;

Warta, Wilhelm .

PROGRESS IN PHOTOVOLTAICS, 2007, 15 (05) :425-430

[9] Growth and transport properties of complementary germanium nanowire field-effect transistors [J].

Greytak, AB ;

Lauhon, LJ ;

Gudiksen, MS ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2004, 84 (21) :4176-4178

[10] Charge transport in hybrid nanorod-polymer composite photovoltaic cells [J].

Huynh, WU ;

Dittmer, JJ ;

Teclemariam, N ;

Milliron, DJ ;

Alivisatos, AP ;

Barnham, KWJ .

PHYSICAL REVIEW B, 2003, 67 (11) :12