Photoluminescence in erbium doped amorphous silicon oxycarbide thin films

被引：31

作者：

Gallis, S

Huang, MB

Efstathiadis, H

Eisenbraun, E

Kaloyeros, AE

Nyein, EE

Hommerich, U

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[2] Hampton Univ, Dept Phys, Hampton, VA 23668 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2032600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) in Er-doped amorphous silicon oxycarbide (a-SiCxOy:Er) thin films, synthesized via thermal chemical vapor deposition, was investigated for carbon and oxygen concentrations in the range of 0-1.63. Intense room-temperature PL was observed at 1540 nm, with the PL intensity being dependent on the carbon and oxygen content. The strongest PL intensity was detected for a-SiC0.53O0.99:Er when pumped at 496.5 nm, with similar to 20 times intensity enhancement as compared to a-SiO2:Er. Broadband excitation in the visible was observed for a-SiC0.53O0.99:Er. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy analyses suggest that the formation of Si-C-O networks plays an important role in enhancing the Er optical activity in a-SiCxOy:Er films.

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