Specific features of electron structures of some thin film d-silicides

被引：14

作者：

Domashevskaya, EP ^{[1
]}

Yurakov, YA ^{[1
]}

机构：

[1] Voronezh State Univ, Voronezh 394693, Russia

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1998年 / 96卷 / 1-3期

关键词：

electron structure; local density of states; thin films; d-silicides; USXES; d-s; p resonance;

D O I：

10.1016/S0368-2048(98)00236-9

中图分类号：

O433 [光谱学];

学科分类号：

0703 [化学]; 070302 [分析化学];

摘要：

The Si L-2,L-3-spectra of thin films of transition d-metal (TM) silicides (d-silicides) obtained by the ultrasoft X-ray emission spectroscopy (USXES) method have been analyzed on the basis of our d-s,p resonance model. Different stoichiometric composition silicides were obtained depending on the annealing conditions of heterostructures TM/Si mono TM/SiO2/Si mono. Compared with the spectra of the bulk samples, Si L-2,L-3-spectra of thin film silicides demonstrate an increased intensity in the high energy range near the Fermi level. The unique sharp intensive peak of the Si s-state at the Fermi level is a consequence of the distinction of d-s resonance in NiSi2. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：195 / 208

页数：14

共 31 条

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