Electrical controlled magnetism in FePt film with the coexistence of two phases

被引:23
作者
Yang, Y. T. [1 ,2 ,3 ]
Wen, J. H. [1 ,2 ,3 ]
Xiong, Y. Q. [1 ,2 ,3 ]
Ma, L. [4 ,5 ,6 ]
Lv, L. Y. [1 ,2 ]
Cao, Q. Q. [1 ,2 ,3 ]
Wang, D. H. [1 ,2 ,3 ]
Du, Y. W. [1 ,2 ,3 ]
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Jiangsu Key Lab Nano Technol, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[4] Tongji Univ, Shanghai Key Lab Special Artificial Microstruct, Shanghai 200092, Peoples R China
[5] Tongji Univ, Pohl Inst Solid State Phys, Shanghai 200092, Peoples R China
[6] Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
基金
中国国家自然科学基金;
关键词
MULTIFERROICS;
D O I
10.1063/1.4913616
中图分类号
O59 [应用物理学];
学科分类号
摘要
A series of FePt films with different magnetic structures are deposited on Pb(Mg1/3Nb2/3)O-3-PbTiO3 substrates. By applying an electric field across the piezoelectric single crystal substrate, an magnetoelectric effect is observed in FePt/Pb(Mg1/3Nb2/3)O-3-PbTiO3 heterostructure due to the phase transformation between face-centered cubic and face-centered tetragonal phases in the film. Taking advantage of the different coercivity caused by the electric field, the sign of magnetization can be manipulated reversibly at room temperature with the electric field switching on or off. Based on this experimental result, we demonstrate a model for the technology of information storage, in which data can be written electrically without false writing. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 28 条
[1]   Multiferroics:: Towards a magnetoelectric memory [J].
Bibes, Manuel ;
Barthelemy, Agnes .
NATURE MATERIALS, 2008, 7 (06) :425-426
[2]   Converse magnetoelectric effect in ferromagnetic shape memory alloy/piezoelectric laminate [J].
Chen, S. Y. ;
Wang, D. H. ;
Han, Z. D. ;
Zhang, C. L. ;
Du, Y. W. ;
Huang, Z. G. .
APPLIED PHYSICS LETTERS, 2009, 95 (02)
[3]   Electrically controlled magnetization switching in a multiferroic heterostructure [J].
Chen, Yajie ;
Fitchorov, Trifon ;
Vittoria, Carmine ;
Harris, V. G. .
APPLIED PHYSICS LETTERS, 2010, 97 (05)
[4]   Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor [J].
Chiba, D ;
Yamanouchi, M ;
Matsukura, F ;
Ohno, H .
SCIENCE, 2003, 301 (5635) :943-945
[5]   Electric-field effect on coercivity distributions in FePt magneto-electric devices [J].
Diez, L. Herrera ;
Bernand-Mantel, A. ;
Michele, O. ;
Vila, L. ;
Warin, P. ;
Marty, A. ;
Ranno, L. ;
Givord, D. .
APPLIED PHYSICS LETTERS, 2013, 102 (01)
[6]  
Ecrcnstcin W., 2007, NAT MATER, V6, P348
[7]   Multiferroic and magnetoelectric materials [J].
Eerenstein, W. ;
Mathur, N. D. ;
Scott, J. F. .
NATURE, 2006, 442 (7104) :759-765
[8]   Electromigration induced fast L10 ordering phase transition in perpendicular FePt films [J].
Feng, Chun ;
Li, Xujing ;
Yang, Meiyin ;
Gong, Kui ;
Zhu, Yuanmin ;
Zhan, Qian ;
Sun, Li ;
Li, Baohe ;
Jiang, Yong ;
Yu, Guanghua .
APPLIED PHYSICS LETTERS, 2013, 102 (02)
[9]   FePt hard magnets [J].
Gutfleisch, O ;
Lyubina, J ;
Müller, KH ;
Schultz, L .
ADVANCED ENGINEERING MATERIALS, 2005, 7 (04) :208-212
[10]   Quadratic Scaling of Intrinsic Gilbert Damping with Spin-Orbital Coupling in L10 FePdPt Films: Experiments and Ab Initio Calculations [J].
He, P. ;
Ma, X. ;
Zhang, J. W. ;
Zhao, H. B. ;
Luepke, G. ;
Shi, Z. ;
Zhou, S. M. .
PHYSICAL REVIEW LETTERS, 2013, 110 (07)