Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates -: art. no. 104921

被引：24

作者：

He, JQ

Jia, CL

Vaithyanathan, V

Schlom, DG

Schubert, J

Gerber, A

Kolhstedt, HH

Wang, RH

机构：

[1] Forschungszentrum Julich Gesell Beschrankter Haft, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Forschungszentrum Julich Gesell Beschrankter Haft, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

[4] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

[5] Wuhan Univ, Ctr Electron Microscopy, Wuhan 430072, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 10期

关键词：

D O I：

10.1063/1.1915519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The SrTiO3/Si interface was investigated by transmission electron microscopy for SrTiO3 films grown on (001) Si by molecular-beam epitaxy with different native oxide (SiO2) removal treatments, and Sr/Ti flux ratios. The interface and film microstructure were independent of the process used to remove the native oxide, but the interface reactivity was dependent on the Sr/Ti flux ratio. A low Sr/Ti flux ratio (similar to 0.8) resulted not only in a layer of amorphous material at the film/substrate interface but also in the formation of crystalline C49 TiSi2 precipitates at that interface. These results are consistent with thermodynamic expectations in which it is paramount to maintain separation between TiO2 and the underlying silicon. (c) 2005 American Institute of Physics.

引用

页数：6

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