Search for high moment soft magnetic materials: FeZrN

被引:19
作者
Chakraborty, A
Mountfield, KR
Bellesis, GH
Lambeth, DN
Kryder, MH
机构
[1] Data Storage Systems Center, Carnegie Mellon University, Pittsburgh
关键词
D O I
10.1063/1.362833
中图分类号
O59 [应用物理学];
学科分类号
摘要
FeN materials exhibiting high moment, law coercivity and small magnetostriction have-previously been reported. Zr has been known to reduce the magnetostriction in other Fe alloys. The criteria for an ideal recording head pole material as well as shields for magnetoresistive sensors include high moment, low coercivity, high permeability, and zero magnetostriction. We present here the properties of 0.3 mu m thick rf sputtered FeZrN films measured as a function of the N-2 partial pressure. The films were deposited at a pressure of 3 mT using a Perkin Elmer sputtering system. The target was composed of Fe with Zr chips covering approximately 2% of the surface area. The easy axis and hard axis coercivities show minima of 1.8 and 0.6 Oe, respectively, at 7-10 % N-2 partial pressure with a saturation magnetization of about 18 kG. The magnetic anisotropy field is approximately 5 Oe yielding a de permeability of approximately 4000 along the hard axis. X-ray data reveal a systematic change in the ratio of alpha-Fe and gamma-Fe-4, N; the amount of the gamma-Fe4N phase increasing with increasing N-2 partial pressure. The magnetostriction increases with increasing N-2 content crossing zero at approximately 6%. The grain size, as probed by atomic force microscopy, is an increasing function of the N-2 partial pressure; from a few nm for N-2 partial pressures of 5% to being as large as 50 nm for a partial pressure of 15%. The surface roughness is about 1 nm. (C) 1996 American Institute of Physics.
引用
收藏
页码:1012 / 1014
页数:3
相关论文
共 9 条
[1]   MAGNETOSTRICTION MEASUREMENT BY INTERFEROMETRY [J].
BELLESIS, GH ;
HARLLEE, PS ;
RENEMA, A ;
LAMBETH, DN .
IEEE TRANSACTIONS ON MAGNETICS, 1993, 29 (06) :2989-2991
[2]  
Nago K., 1992, IEEE Translation Journal on Magnetics in Japan, V7, P119, DOI 10.1109/TJMJ.1992.4565343
[3]  
NAKANISHI K, 1992, IEEE T, P128
[4]   STRESS, MICROSTRUCTURE AND MATERIALS RELIABILITY OF SPUTTER-DEPOSITED FE-N FILMS [J].
NARAYAN, PB ;
KIM, YK .
IEEE TRANSACTIONS ON MAGNETICS, 1994, 30 (06) :3921-3923
[5]   MICROSTRUCTURAL INVESTIGATIONS OF FEN AND FEALN THIN-FILMS FOR RECORDING HEAD APPLICATIONS [J].
ROGERS, DJ ;
WANG, S ;
LAUGHLIN, DE ;
KRYDER, MH .
IEEE TRANSACTIONS ON MAGNETICS, 1992, 28 (05) :2418-2420
[6]   CRYSTAL-STRUCTURE AND SOFT MAGNETIC-PROPERTIES OF FEZRN/ALN MULTILAYER FILMS [J].
TANEKO, N ;
SHIMADA, Y ;
FUKAMICHI, K ;
YOSHIHARA, A ;
MIYAKAWA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1687-1691
[7]   RF-DIODE-SPUTTERED IRON NITRIDE FILMS FOR THIN-FILM RECORDING HEAD MATERIALS [J].
WANG, S ;
KRYDER, MH .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) :5134-5136
[8]   NITROGEN-DOPED IRON-FILM-BASED LAMINATED MATERIALS FOR THIN-FILM RECORDING-HEADS [J].
WANG, S ;
KRYDER, MH .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) :5625-5627
[9]  
WANG SH, THESIS CARNEGI MELLO