HfO2 gate dielectrics on strained-Si and strained-SiGe layers

被引：14

作者：

Johansson, M ^{[1
]}

Yousif, MYA

Lundgren, P

Bengtsson, S

Sundqvist, J

Hårsta, A

Radamson, HH

机构：

[1] Chalmers Univ Technol, Solid State Elect Lab, Dept Microelect & Microtechnol, Ctr Chalmers MC2, S-41296 Gothenburg, Sweden

[2] Angstrom Lab, Dept Chem Mat, SE-75121 Uppsala, Sweden

[3] Royal Inst Technol, KTH, Dept Elect, Lab Mat & Semicond Phys, SE-16440 Kista, Sweden

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 09期

关键词：

D O I：

10.1088/0268-1242/18/9/302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on materials and device characterization of polycrystalline HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600 degreesC on strained-Si and strained-SiGe layers. No change in the diffusion profile of Hf into the Si substrate was observed for temperatures in the range 900-1100 degreesC for 20 min. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of similar to1 x 10(11) cm(-2) eV(-1) was obtained for the thicker HfO2 films. The breakdown fields were in the range 2-5 MV cm(-1), which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the thin HFO2 with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si, though high interface state densities (similar to1 x 10(12) cm(-2) eV(-1)) were observed. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltages.

引用

页码：820 / 826

页数：7

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