Microscopic origins of electron and hole stability in ZnO

被引：51

作者：

Catlow, C. Richard A. ^{[1
]}

Sokol, Alexey A. ^{[1
]}

Walsh, Aron ^{[1
]}

机构：

[1] UCL, Dept Chem, London WC1H 0AJ, England

来源：

CHEMICAL COMMUNICATIONS | 2011年 / 47卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

ZINC-OXIDE; THIN-FILMS; N-TYPE; HYDROGEN; DEFECTS;

D O I：

10.1039/c1cc10314h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.

引用

页码：3386 / 3388

页数：3

共 28 条

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