Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications

被引：41

作者：

Choi, S ^{[1
]}

Kim, SS

Chang, M

Hwang, H

Jeon, S

Kim, C

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Samsung Adv Inst Technol, MD Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期

关键词：

D O I：

10.1063/1.1890481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiN nanocrystals formed by a co-sputtering method have been investigated as discrete charge traps for metal-oxide-nitride-oxide-silicon-type nonvolatile memory devices. The formation of isolated TiN nanocrystals embedded in Al2O3 was confirmed by transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analyses. In addition, superior thermal stability of TiN nanocystals embedded in Al2O3 was confirmed. Compared to the control samples without TiN nanocrystals, Al2O3 layers with TiN nanocrystals exhibited wider capacitance-voltage hysteresis and this in turn showed better charge trapping characteristics due to the incorporation of TiN nanocrystals into Al2O3. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 13 条

[1] Improved metal-oxide-nitride-oxide-silicon-type flash device with high-k dielectrics for blocking layer [J].

Choi, S ;

Cho, M ;

Hwang, H ;

Kim, JW .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) :5408-5410

[2] High-k gate dielectric prepared by low-temperature wet oxidation of ultrathin metal nitride directly deposited on silicon [J].

Choi, SM ;

Jeon, SH ;

Cho, MJ ;

Hwang, HS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (2A) :L102-L104

[3] Metal-oxide-semiconductor structure with Ge nanocrystals for memory devices applications [J].

Das, K ;

Maikap, S ;

Dhar, A ;

Mathur, BK ;

Ray, SK .

ELECTRONICS LETTERS, 2003, 39 (25) :1865-1866

[4] Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes [J].

Kim, KS ;

Jang, YC ;

Kim, KJ ;

Lee, NE ;

Youn, SP ;

Roh, KJ ;

Roh, YH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04) :1164-1169

[5]

Lee C, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P557

[6] Optical and electrical properties of Si nanocrystals embedded in SiO2 layers [J].

Lee, S ;

Shim, YS ;

Cho, HY ;

Kim, DY ;

Kim, TW ;

Wang, KL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12) :7180-7183

[7] Metal nanocrystal memories - Part I: Device design and fabrication [J].

Liu, ZT ;

Lee, C ;

Narayanan, V ;

Pei, G ;

Kan, EC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) :1606-1613

[8]

Moulder J.F., 1995, HDB XRAY PHOTOELECTR

[9] Pt-WOx electrode structure for thin-film fuel cells [J].

Park, KW ;

Ahn, KS ;

Choi, JH ;

Nah, YC ;

Kim, YM ;

Sung, YE .

APPLIED PHYSICS LETTERS, 2002, 81 (05) :907-909

[10]

Sugizaki T., 2003, P VLSI S, P27

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