Preparation of organic light-emitting field-effect transistors with asymmetric electrodes

被引：29

作者：

Sakanoue, T

Fujiwara, E

Yamada, R

Tada, H ^{[1
]}

机构：

[1] Grad Univ Adv Studies, Dept Struct Mol Sci, Okazaki, Aichi 4448787, Japan

[2] Natl Inst Nat Sci, Inst Mol Sci, Okazaki, Aichi 4448787, Japan

来源：

CHEMISTRY LETTERS | 2005年 / 34卷 / 04期

关键词：

D O I：

10.1246/cl.2005.494

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Light-emitting field-effect transistors (LEFET) based on poly [2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV) were prepared with asymmetric electrodes of a Au/Cr source and an Al drain on a SiO2 gate insulator (600nm) through twice of photolithography and lift-off techniques. The light emission was observed when the gate voltages increased above -40V at the drain voltage of -100V. The luminous efficiency of the devices was significantly improved comparing to those with conventional electrodes of Au/Cr.

引用

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页码：494 / 495

页数：2

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