Dose rate effects in focused ion beam synthesis of cobalt disilicide

被引：15

作者：

Hausmann, S ^{[1
]}

Bischoff, L ^{[1
]}

Teichert, J ^{[1
]}

Voelskow, M ^{[1
]}

Grambole, D ^{[1
]}

Herrmann, F ^{[1
]}

Moller, W ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 21期

关键词：

D O I：

10.1063/1.121110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV Co2+ implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an implantation temperature of about 400 degrees C it is only possible to form continuous CoSi2 layers using sufficiently short pixel dwell-times. This result is explained by :In enhanced damage accumulation for longer dwell-times. (C) 1998 American Institute of Physics.

引用

页码：2719 / 2721

页数：3

共 18 条

[1] NICKEL AND COBALT SILICIDE FORMATION BY BROAD AND FOCUSED ION-BEAM IMPLANTATION [J].