Lattice contraction in carbon-doped GaAs epilayers

被引：22

作者：

Li, W ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Dept Phys, FIN-33101 Tampere, Finland

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.57.14627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial GaAs layers, heavily doped with carbon, have been grown by gas-source molecular-beam epitaxy using an electron-beam-evaporating graphite source for doping. Lattice strain and electrical compensation in these samples have been studied theoretically and experimentally. Most of the carbon accepters can be activated by post-growth annealing at 490 degrees C in the N-2 ambient, probably due to the reduction of C-H bonds formed during growth. Annealing at higher temperatures reduces the electrical activity and causes an abrupt change in lattice strain, likely due to the formation of C-C interstitial couples.

引用

页码：14627 / 14629

页数：3

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