HEAVY CARBON DOPING OF GAAS GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY

被引：31

作者：

GIANNINI, C ^{[1
]}

FISCHER, A ^{[1
]}

LANGE, C ^{[1
]}

PLOOG, K ^{[1
]}

TAPFER, L ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.108212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the incorporation of carbon in GaAs at doping levels beyond 10(19) CM-3 grown by conventional solid-source molecular-beam epitaxy. The correlation of Hall effect measurements at 77 and 300 K and of double crystal x-ray diffractometry allows us to determine the fraction of carbon incorporated on As sites acting as acceptors. These experiments reveal the onset of compensation at the highest doping levels of 5 X 10(19) cm-3.

引用

页码：183 / 185

页数：3

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