VACANCY COMPLEXES IN GAAS - EFFECTS ON IMPURITY COMPENSATION

被引：6

作者：

CHADI, DJ

ZHANG, SB

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.41.5444

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The energetics of shallow impurity compensation in GaAs via reactions of the type VAs (VGa+GaAs), where V denotes a vacancy and GaAs a Ga-antisite defect is examined. It is proposed that in n-type GaAs this single-atom-displacement reaction is unstable with respect to a similar type of process, namely, 2VAs (VAs+VGa+GaAs). The latter does not lead to any compensation of donors, thereby removing discrepancies between theoretical predictions and experimental results on donor passivation by native defects in GaAs. © 1990 The American Physical Society.

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页码：5444 / 5446

页数：3

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