n-UV plus blue/green/red white light emitting diode lamps

被引:99
作者
Kuo, CH [1 ]
Sheu, JK
Chang, SJ
Su, YK
Wu, LW
Tsai, JM
Liu, CH
Wu, RK
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[2] Nantex Ind Corp, Lin Yuan, Kaohsiung Count, Taiwan
[3] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yenshui 737, Taiwan
[4] S Epitaxy Corp, Hsin Shi, Tainan County, Taiwan
[5] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期
关键词
white light; LED; phosphor; color temperature; color-rendering index;
D O I
10.1143/JJAP.42.2284
中图分类号
O59 [应用物理学];
学科分类号
摘要
Phosphor-conversion light-emitting diode (LED) lamps were fabricated by precoating blue/green/red phosphors onto near-ultraviolet (n-UV) LED chips prior to packaging them into LED lamps. With a 20 mA injection current, it was found that the color temperature, T-c, was approximately 5900K, the color rendering index, R-a, was approximately 75, and the CIE color coordinates were x = 0.33 and y = 0.35 for the "n-UV+blue/green/red" white LED lamps. No obvious changes in color temperature, T-c, or color-rendering index, R,, could be observed when we increased the injection from 20 mA to 60 mA. These results indicate that such "n-UV+blue/green/red" white LED lamps are much more optically stable than the conventional "blue+yellow" LED lamps.
引用
收藏
页码:2284 / 2287
页数:4
相关论文
共 14 条
  • [1] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
    Chang, SJ
    Kuo, CH
    Su, YK
    Wu, LW
    Sheu, JK
    Wen, TC
    Lai, WC
    Chen, JF
    Tsai, JM
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) : 744 - 748
  • [2] GUO X, 1999, IEDM, P600
  • [3] AlGaN/GaN quantum well ultraviolet light emitting diodes
    Han, J
    Crawford, MH
    Shul, RJ
    Figiel, JJ
    Banas, M
    Zhang, L
    Song, YK
    Zhou, H
    Nurmikko, AV
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (12) : 1688 - 1690
  • [4] White light from InGaN/conjugated polymer hybrid light-emitting diodes
    Hide, F
    Kozodoy, P
    DenBaars, SP
    Heeger, AJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (20) : 2664 - 2666
  • [5] Red, green, and blue LEDs for white light illumination
    Muthu, S
    Schuurmans, FJP
    Pashley, MD
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) : 333 - 338
  • [6] Nakamura S., 1996, The blue laser diode: GaN based light emitters and lasers, VFirst, DOI DOI 10.1007/978-3-662-03462-0
  • [7] Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip
    Narukawa, Y
    Niki, I
    Izuno, K
    Yamada, M
    Murazaki, Y
    Mukai, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4A): : L371 - L373
  • [8] Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
    Sheu, JK
    Chi, GC
    Su, YK
    Liu, CC
    Chang, CM
    Hung, WC
    Jou, MJ
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (06) : 1055 - 1058
  • [9] White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer
    Sheu, JK
    Pan, CJ
    Chi, GC
    Kuo, CH
    Wu, LW
    Chen, CH
    Chang, SJ
    Su, YK
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (04) : 450 - 452
  • [10] High-transparency Ni/Au ohmic contact to p-type GaN
    Sheu, JK
    Su, YK
    Chi, GC
    Koh, PL
    Jou, MJ
    Chang, CM
    Liu, CC
    Hung, WC
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2340 - 2342