Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study

被引:133
作者
Ouyang, Yijian [1 ]
Yoon, Youngki [1 ]
Guo, Jing [1 ]
机构
[1] Univ Florida, Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
ballistic transport; device simulation; graphene field-effect transistor; quantum transport; Schottky barrier; transistor scaling;
D O I
10.1109/TED.2007.902692
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by self-consistently solving the nonequilibrium Green's function transport equation in an atomistic basis set with a 3-D Poisson equation. The armchair edge GNR channel shares similarities with a zigzag carbon nanotube: however, it has a different geometry and quantum confinement boundary condition in the transverse direction. The results indicate that the I-V characteristics are ambipolar and strongly depend on the GNR width because the bandgap of the GNR is approximately inversely proportional to its width, which agrees with recent experiments. A multiple gate geometry improves immunity to short channel effects; however, it offers smaller improvement than it does for Si MOSFETs in terms of the on-current and transconductance. Reducing the oxide thickness is more useful for improving transistor performance than using a high-kappa gate insulator. Significant increase of the minimal leakage current is observed when the channel length is scaled below 10 nm because the small effective mass facilitates strong source-drain tunneling. The GNRFET, therefore, does not promise to extend the ultimate scaling limit of Si MOSFETs. The intrinsic switching speed of a GNR SBFET, however, is several times faster than that of Si MOSFETs, which could lead to promising high-speed electronics applications, where the large leakage of GNR SBFETs is of less concern.
引用
收藏
页码:2223 / 2231
页数:9
相关论文
共 22 条
[1]   Electronic confinement and coherence in patterned epitaxial graphene [J].
Berger, Claire ;
Song, Zhimin ;
Li, Xuebin ;
Wu, Xiaosong ;
Brown, Nate ;
Naud, Cecile ;
Mayou, Didier ;
Li, Tianbo ;
Hass, Joanna ;
Marchenkov, Atexei N. ;
Conrad, Edward H. ;
First, Phillip N. ;
de Heer, Wait A. .
SCIENCE, 2006, 312 (5777) :1191-1196
[2]   Benchmarking nanotechnology for high-performance and low-power logic transistor applications [J].
Chau, R ;
Datta, S ;
Doczy, M ;
Doyle, B ;
Jin, J ;
Kavalieros, J ;
Majumdar, A ;
Metz, M ;
Radosavljevic, M .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (02) :153-158
[3]  
CHEN Z, CONDMAT0701599, P48302
[4]  
Datta S., 2005, QUANTUM TRANSPORT AT
[5]   Properties and applications of high-mobility semiconducting nanotubes [J].
Dürkop, T ;
Kim, BM ;
Fuhrer, MS .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (18) :R553-R580
[6]   A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry [J].
Fiori, Gianluca ;
Iannaccone, Giuseppe ;
Klimeck, Gerhard .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (08) :1782-1788
[7]   Room-temperature ballistic transport in narrow graphene strips [J].
Gunlycke, D. ;
Lawler, H. M. ;
White, C. T. .
PHYSICAL REVIEW B, 2007, 75 (08)
[8]   A numerical study of scaling issues for Schottky-Barrier carbon nanotube transistors [J].
Guo, J ;
Datta, S ;
Lundstrom, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (02) :172-177
[9]  
HAN MY, 2007, CONDMAT0702511
[10]   Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors [J].
Heinze, S ;
Radosavljevic, M ;
Tersoff, J ;
Avouris, P .
PHYSICAL REVIEW B, 2003, 68 (23)