OXIDE ELECTRONICS Interface takes charge over Si

被引：91

作者：

Schlom, Darrell G. ^{[1
]}

Mannhart, Jochen ^{[2
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Univ Augsburg, Ctr Elect Correlat & Magnetism, D-86135 Augsburg, Germany

来源：

NATURE MATERIALS | 2011年 / 10卷 / 03期

关键词：

GAS;

D O I：

10.1038/nmat2965

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of a two-dimensional electron liquid at the interface between two insulating oxides, now extended to oxides on Si, joins a wealth of observations that reveal how electron transfer between layers is responsible for this unusual effect.

引用

页码：168 / 169

页数：3

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