Metallic conductivity at the CaHfO3/SrTiO3 interface

被引：45

作者：

Shibuya, Keisuke

Ohnishi, Tsuyoshi

Lippmaa, Mikk

Oshima, Masaharu

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[3] Japan Sci & Technol Agcy, Core Res Evaluat Sci & Technol, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2816907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport and photoluminescence properties of interfaces between amorphous CaHfO3 films and SrTiO3 single crystal substrates were investigated. Although both materials are band-gap insulators, the interfaces were metallic. The sheet carrier density was found to depend strongly on the laser fluence used during the CaHfO3 layer fabrication by pulsed laser deposition, indicating the presence of oxygen vacancies at the interface. The Hall mobility of the heterostructures saturated at 2000 cm(2)/V s at low temperature. Photoluminescence spectra showed an oxygen vacancy-related emission band at around 420 nm. (c) 2007 American Institute of Physics.

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页数：3

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