Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending

被引：57

作者：

Chen, Ming-Wei ^{[1
,2
]}

Retamal, Jose Ramon Duran ^{[1
,2
]}

Chen, Cheng-Ying ^{[1
,2
]}

He, Jr-Hau ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 03期

关键词：

Nanowire (NW); photodetector; relaxation time; surface band bending (SBB); ZnO; ENHANCEMENT;

D O I：

10.1109/LED.2011.2180012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

引用

页码：411 / 413

页数：3

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