Photoconducting response on bending of individual ZnO nanowires

被引：79

作者：

Gao, P.

Wang, Z. Z.

Liu, K. H.

Xu, Z.

Wang, W. L.

Bai, X. D. ^{[1
]}

Wang, E. G.

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2009年 / 19卷 / 07期

关键词：

FIELD-EFFECT TRANSISTOR; ULTRAVIOLET PHOTODETECTORS; SENSING CHARACTERISTICS; TRANSPORT; FABRICATION;

D O I：

10.1039/b816791e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The bending effect of individual zinc oxide (ZnO) nanowires on photoconducting behavior has been investigated by an in situ transmission electron microscopy (TEM) method. By increasing the nanowire bending, the photocurrent of ZnO nanowire under ultraviolet illumination drops dramatically and the photoresponse time becomes much shorter. A possible mechanism has been proposed and discussed. The improved photo response performance by bending ZnO nanowires could be of significance for their optoelectronics and sensor applications.

引用

收藏

页码：1002 / 1005

页数：4

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