Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors

被引：239

作者：

Hong, Woong-Ki ^{[1
]}

Sohn, Jung Inn ^{[2
]}

Hwang, Dae-Kue ^{[1
]}

Kwon, Soon-Shin ^{[1
]}

Jo, Gunho ^{[1
]}

Song, Sunghoon ^{[1
]}

Kim, Seong-Min ^{[3
]}

Ko, Hang-Ju ^{[3
]}

Park, Seong-Ju ^{[1
]}

Welland, Mark E. ^{[2
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England

[3] Korea Photon Technol Inst, Ctr Mat Characterizat, Kwangju 500640, South Korea

来源：

NANO LETTERS | 2008年 / 8卷 / 03期

关键词：

D O I：

10.1021/nl0731116

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Surface-architecture-control led ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

引用

页码：950 / 956

页数：7

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