One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering

被引：108

作者：

Cong, GW ^{[1
]}

Wei, HY ^{[1
]}

Zhang, PF ^{[1
]}

Peng, WQ ^{[1
]}

Wu, JJ ^{[1
]}

Liu, XL ^{[1
]}

Jiao, CM ^{[1
]}

Hu, WG ^{[1
]}

Zhu, QS ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 23期

关键词：

D O I：

10.1063/1.2137308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed a transition from film to vertically well-aligned nanorods for ZnO grown on sapphire (0001) substrates by metalorganic chemical vapor deposition. A growth mechanism was proposed to explain such a transition. Vertically well-aligned homogeneous nanorods with average diameters of similar to 30, 45, 60, and 70 nm were grown with the c-axis orientation. Raman scattering showed that the E-2 (high) mode shifted to high frequency with the decrease of nanorod diameters, which revealed the dependence of nanorod diameters on the stress state. This dependence suggests a stress-driven diameter-controlled mechanism for ZnO nanorod arrays grown on sapphire (0001) substrates. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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