Study of trap states in zinc oxide (ZnO) thin films for electronic applications

被引：28

作者：

Casteleiro, C. ^{[1
]}

Gomes, H. L. ^{[1
]}

Stallinga, P. ^{[1
]}

Bentes, L. ^{[2
]}

Ayouchi, R. ^{[2
]}

Schwarz, R. ^{[2
]}

机构：

[1] Univ Algarve, Fac Sci & Technol, P-8005139 Faro, Portugal

[2] Inst Super Tecn, Dept Fis, Lisbon, Portugal

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

关键词：

thin film transistors; thermally stimulated and depolarization current; laser deposition; defects;

D O I：

10.1016/j.jnoncrysol.2007.10.059

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm(2)/V s show non-linearities both in the current-voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance-voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2519 / 2522

页数：4

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