Focused ion beam sputtering investigations on SiC

被引：25

作者：

Bischoff, L ^{[1
]}

Teichert, J ^{[1
]}

Heera, V ^{[1
]}

机构：

[1] Rossendorf Inc, Res Ctr, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期

关键词：

focused ion beam; sputtering; SiC; swelling; milling rate;

D O I：

10.1016/S0169-4332(01)00520-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The focused ion beam (FIB) is a very useful tool to sputter holes with well-defined dimensions which can be easily analysed by surface profiling measurements. Applying this the sputtering yields of 6H:SiC were measured for 35 and 70 keV Si, Co, Ge, Nd and Au ions from a mass separated FIB. Additionally, the sputtering yield was determined as a function of the angle of incidence and the target temperature for gold ions. The swelling due to ion implantation will be discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：372 / 376

页数：5

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