TEMPERATURE-DEPENDENCE OF SPUTTERING YIELD OF GAAS UNDER 30 KEV AR+ BOMBARDMENT

被引:6
作者
BHATTACHARYYA, SR
GHOSE, D
BASU, D
机构
[1] Mass Spectroscopy and Isotope Separator Laboratory, Saha Institute of Nuclear Physics, Calcutta, 700064, Block-AF, Sector-1, Bidhan Nagar
关键词
D O I
10.1007/BF00241008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:1192 / 1194
页数:3
相关论文
共 12 条
[1]   TEMPERATURE DEPENDENCE OF SPUTTERING OF A SILVER SINGLE-CRYSTAL [J].
BHATTACHARYA, RS ;
MUKHERJEE, DK ;
KARMOHAPATRO, SB .
NUCLEAR INSTRUMENTS & METHODS, 1972, 99 (03) :509-+
[2]  
BHATTACHARYA SR, 1987, J VACUUM SCI TECHN A, V5, P178
[3]   BOMBARDMENT-INDUCED PHOTON EMISSION FROM GAAS AS A FUNCTION OF TARGET TEMPERATURE [J].
BROZDOWSKAWARCZAK, B ;
GABLA, L ;
PEDRYS, R ;
SZYMONSKI, M ;
WARCZAK, A .
SURFACE SCIENCE, 1978, 75 (01) :61-68
[4]   SPUTTERING OF GAAS SINGLE CRYSTALS BY 8-16 KEV ARGON IONS [J].
FARREN, J ;
SCAIFE, WJ .
TALANTA, 1968, 15 (11) :1217-&
[5]   SELF-SPUTTERING OF GE SINGLE-CRYSTALS [J].
HOLMEN, G .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01) :7-11
[6]   SINGLE-CRYSTAL SPUTTERING INCLUDING CHANNELING PHENOMENON [J].
ONDERDELINDEN, D .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :739-+
[7]   THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].
SIGMUND, P .
PHYSICAL REVIEW, 1969, 184 (02) :383-+
[8]   SPUTTERING OF SILICON AND GERMANIUM BY MIDDLE-ENERGY HEAVY-IONS [J].
SOMMERFELDT, H ;
MASHKOVA, ES ;
MOLCHANOV, VA .
PHYSICS LETTERS A, 1972, A 38 (04) :237-+
[9]   SPUTTERING OF GALLIUM-ARSENIDE AT ELEVATED-TEMPERATURES [J].
SZYMONSKI, M ;
BHATTACHARYA, RS .
APPLIED PHYSICS, 1979, 20 (03) :207-211
[10]  
TOMITA M, 1986, J NUCL MATER, V138, P248, DOI 10.1016/0022-3115(86)90013-9