SELF-SPUTTERING OF GE SINGLE-CRYSTALS

被引：22

作者：

HOLMEN, G ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DEPT PHYS,GOTHENBURG,SWEDEN

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1975年 / 24卷 / 01期

关键词：

D O I：

10.1080/00337577508239471

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：7 / 11

页数：5

共 29 条

[1] LOW-ENERGY SPUTTERING YIELDS OF GE SINGLE CRYSTALS AS A FUNCTION OF TEMPERATURE [J].

ANDERSON, GS .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1607-&

[2] TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE SPUTTERING [J].

ANDERSON, GS ;

OLIN, HJ ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) :3492-&

[3] TEMPERATURE DEPENDENCE OF SPUTTERING YIELDS OF GE (100) AND (110) SURFACES [J].

ANDERSON, GS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2838-&

[4] ATOM EJECTION PATTERNS IN SINGLE-CRYSTAL SPUTTERING [J].

ANDERSON, GS ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2305-2313

[5] ATOM EJECTION IN LOW ENERGY SPUTTERING OF SINGLE CRYSTALS OF FCC METALS AND OF GE AND SI [J].

ANDERSON, GS .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2017-&

[6] ATOM EJECTION STUDIES FOR SPUTTERING OF SEMICONDUCTORS [J].

ANDERSON, GS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3455-&

[7] TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE, SI, INSB, AND INAS SPUTTERING [J].

ANDERSON, GS ;

WEHNER, GK .

SURFACE SCIENCE, 1964, 2 :367-375

[8] FESTKORPERZERSTAUBUNG DURCH IONENBESCHUSS [J].

BEHRISCH, R .

ERGEBNISSE DER EXAKTEN NATURWISSENSCHAFTEN, 1964, 35 :295-443

[9] UNIFIED SPUTTERING THEORY [J].

BRANDT, W ;

LAUBERT, R .

NUCLEAR INSTRUMENTS & METHODS, 1967, 47 (02) :201-&

[10]

Carter G., 1968, ION BOMBARDMENT SOLI

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