TEMPERATURE-DEPENDENCE OF SPUTTERING YIELD OF GAAS UNDER 30 KEV AR+ BOMBARDMENT

被引:6
作者
BHATTACHARYYA, SR
GHOSE, D
BASU, D
机构
[1] Mass Spectroscopy and Isotope Separator Laboratory, Saha Institute of Nuclear Physics, Calcutta, 700064, Block-AF, Sector-1, Bidhan Nagar
关键词
D O I
10.1007/BF00241008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:1192 / 1194
页数:3
相关论文
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[12]   ANNEALING OF ION BOMBARDMENT DAMAGE IN GE [J].
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PHYSICS LETTERS A, 1970, A 32 (05) :308-+