Strain analysis in MEMS/NEMS structures and devices by using focused ion beam system

被引:19
作者
Li, B [1 ]
Tang, XS
Xie, HM
Xin, Z
机构
[1] Boston Univ, Dept Mfg Engn, Boston, MA 02215 USA
[2] Boston Univ, Fraunhofer USA Ctr Mfg Innovat, Boston, MA 02215 USA
[3] Inst Mat Res & Engn, Singapore, Singapore
[4] Tsing Hua Univ, Dept Engn Mech, Tsinghua, Peoples R China
关键词
focused ion beam; Moire; strain; mass gauge;
D O I
10.1016/j.sna.2003.07.014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measurement of residual strain/stress in microstructures using a focused ion beam (FIB) moire technique is demonstrated in this paper. This technique is selected based on advantages of the FIB system in nano-machining, in situ deposition, imaging, and fine adjustment. A nano-grating is directly written on the top of the microstructures by ion milling without any etch mask; the FIB moire pattern is formed by the interference between a prepared specimen grating and raster scan lines. Effects of milling sequence, grating spacing and trench depth on the nano-grating structures and moire fringes have been investigated. Strain evolution in microstructures during underlying sacrificial layer etching was studied. The sign of strain was derived from a rotation moire technique. Moreover, a mass loading gauge with nano-gram resolution has been built. Since the local strain of a microstructure itself can be monitored during the process, the FIB moire technique has many potential applications in the mechanical metrology of micro/nano-electro-mechanical- systems (MEMS/NEMS). (C) 2003 Elsevier B.V. All fights reserved.
引用
收藏
页码:57 / 62
页数:6
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