New concept for the reduction of impurity scattering in remotely doped GaAs quantum wells

被引:141
作者
Friedland, KJ
Hey, R
Kostial, H
Klann, R
Ploog, K
机构
[1] Paul-Drude-Institut für Festkörperelektronik, Berlin, D-10117
关键词
D O I
10.1103/PhysRevLett.77.4616
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a new concept to reduce impurity scattering in remotely doped GaAs single quantum wells by using heavy-mass X electrons in barriers formed by short-period AlAs/GaAs superlattices to smooth the potential fluctuations of the ionized Si dopants. Electron mobilities as high as 120 m(2)/V s and electron densities up to 1.5 x 10(16) m(-2) are obtained in 10 nm GaAs single quantum wells in the one-subband conductivity mode without any parallel conductance. In addition to magnetotransport we present voltage dependent capacitance and photoluminescence measurements as well as self-consistent calculations to demonstrate the applicability of our concept.
引用
收藏
页码:4616 / 4619
页数:4
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