UV photodetectors from thin film diamond

被引：24

作者：

Chan, SSM

McKeag, RD

Whitfield, MD

Jackman, RB

机构：

[1] Dept. of Electron. and Elec. Eng., University College London, London WC1E7JE, Torrington Place

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1996年 / 154卷 / 01期

关键词：

D O I：

10.1002/pssa.2211540131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of chemically vapour deposited diamond have been used to fabricate photoconductive and photodiode structures for the detection of UV light. On free standing (80 mu m thick) material, a planar interdigitated design with 20 mu m electrode spacing is found to offer greater than five orders of magnitude in wavelength discrimination between deep UV and visible light, with dark currents <0.1 nA, when a methane-air gas treatment is used. On silicon supported (6 mu m thick) films, a planar photodiode utilising gold Schottky and Ti-Ag-Au ohmic contacts, also offers a sharp cut-off in photoresponse in the deep UV with no measurable dark current; photoconductive devices fabricated on this material do not show useful levels of performance.

引用

页码：445 / 454

页数：10

共 13 条

[1]

BARAL B, IN PRESS J VACUUM SC

[2] HIGH-VOLTAGE OPTOELECTRONIC SWITCHING IN DIAMOND [J].

BHARADWAJ, PK ;

CODE, RF ;

VANDRIEL, HM ;

WALENTYNOWICZ, E .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :207-209

[3] DIAMOND METAL-SEMICONDUCTOR-METAL ULTRAVIOLET PHOTODETECTORS [J].

BINARI, SC ;

MARCHYWKA, M ;

KOOLBECK, DA ;

DIETRICH, HB ;

MOSES, D .

[4]

FIELD J.E., 1992, PROPERTIES NATURAL S

[5] CHARACTERIZATION OF DIAMOND FILMS BY RAMAN-SPECTROSCOPY [J].

KNIGHT, DS ;

WHITE, WB .

JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) :385-393

[6]

Koller L.R., 1965, ULTRAVIOLET RAD

[7] DEVICE PROPERTIES OF HOMOEPITAXIALLY GROWN DIAMOND [J].

LANDSTRASS, MI ;

PLANO, MA ;

MORENO, MA ;

MCWILLIAMS, S ;

PAN, LS ;

KANIA, DR ;

HAN, S .

[8] ULTRAVIOLET PHOTORESPONSE CHARACTERISTICS OF DIAMOND DIODES [J].

MARCHYWKA, M ;

HOCHEDEZ, JF ;

GEIS, MW ;

SOCKER, DG ;

MOSES, D ;

GOLDBERG, RT .

APPLIED OPTICS, 1991, 30 (34) :5011-5013

[9] HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES [J].

MCKEAG, RD ;

CHAN, SSM ;

JOHNSON, C ;

CHALKER, PR ;

JACKMAN, RB .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3) :223-227

[10] POLYCRYSTALLINE DIAMOND PHOTOCONDUCTIVE DEVICE WITH HIGH UV-VISIBLE DISCRIMINATION [J].

MCKEAG, RD ;

CHAN, SSM ;

JACKMAN, RB .

APPLIED PHYSICS LETTERS, 1995, 67 (15) :2117-2119

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