ULTRAVIOLET PHOTORESPONSE CHARACTERISTICS OF DIAMOND DIODES

被引：18

作者：

MARCHYWKA, M

HOCHEDEZ, JF

GEIS, MW

SOCKER, DG

MOSES, D

GOLDBERG, RT

机构：

来源：

APPLIED OPTICS | 1991年 / 30卷 / 34期

关键词：

ULTRAVIOLET; DIAMOND; PHOTODIODE; DETECTOR;

D O I：

10.1364/AO.30.005011

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The photoresponse of Schottky and np-diamond diodes has been measured from 120 to 600 nm. The ultraviolet response is 100 times the visible response.

引用

页码：5011 / 5013

页数：3

共 8 条

[1] ION-BEAM-ASSISTED ETCHING OF DIAMOND [J].

EFREMOW, NN ;

GEIS, MW ;

FLANDERS, DC ;

LINCOLN, GA ;

ECONOMOU, NP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :416-418

[2] DIAMOND COLD-CATHODE [J].

GEIS, MW ;

EFREMOW, NN ;

WOODHOUSE, JD ;

MCALEESE, MD ;

MARCHYWKA, M ;

SOCKER, DG ;

HOCHEDEZ, JF .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :456-459

[3] OPTICAL TRANSMISSION OF GRAPHITE COMPOUNDS [J].

HENNIG, GR .

JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (04) :1201-&

[4] PSEUDO-JAHN-TELLER OPTICAL-ABSORPTION OF ISOLATED NITROGEN IN DIAMOND [J].

KOPPITZ, J ;

SCHIRMER, OF ;

SEAL, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (08) :1123-1133

[5] DIAMOND SURFACE .1. STRUCTURE OF CLEAN SURFACE AND INTERACTION WITH GASES AND METALS [J].

LURIE, PG ;

WILSON, JM .

SURFACE SCIENCE, 1977, 65 (02) :453-475

[6] BIPOLAR-TRANSISTOR ACTION IN ION-IMPLANTED DIAMOND [J].

PRINS, JF .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :950-952

[7]

Rhoderick E H, 1980, METAL SEMICONDUCTOR

[8] ULTRAVIOLET AND EXTREME ULTRAVIOLET RESPONSE OF CHARGE-COUPLED-DEVICE DETECTORS [J].

STERN, RA ;

CATURA, RC ;

KIMBLE, R ;

DAVIDSEN, AF ;

WINZENREAD, M ;

BLOUKE, MM ;

HAYES, R ;

WALTON, DM ;

CULHANE, JL .

OPTICAL ENGINEERING, 1987, 26 (09) :875-883

← 1 →