HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES

被引：11

作者：

MCKEAG, RD

CHAN, SSM

JOHNSON, C

CHALKER, PR

JACKMAN, RB

机构：

[1] UNIV LONDON UNIV COLL, LONDON WC1E 7JE, ENGLAND

[2] HARWELL LAB, DEPT SURFACE TECHNOL, AEA TECHNOL, DIDCOT OX11 0RA, OXON, ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

DIAMOND; DIODES; HIGH TEMPERATURE; SCHOTTKY;

D O I：

10.1016/0921-5107(94)04046-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The wide band gap of diamond (5.5 eV) suggests that high temperature electronic device operation will be achievable. The emergence of polycrystalline thin film diamond, grown by chemical vapour deposition methods, has made this prospect commercially interesting. Among the primary requirements for the realization of such a device are ohmic and Schottky contacts which display longterm stability at elevated temperatures. In this paper a widely used ohmic metallization scheme, Ti-Au, is contrasted with a trilevel contact, Ti-Ag-Au. Given the morphology and doping level of the diamond film used, Ti-Ag-Au coupled with an Al Schottky barrier offers stable diode characteristics following operation at 400 degrees C.

引用

页码：223 / 227

页数：5

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