Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane

被引：31

作者：

Aoki, T

Ogishima, T

Wróbel, AM

Nakanishi, Y

Hatanaka, Y

机构：

[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

[3] Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland

来源：

VACUUM | 1998年 / 51卷 / 04期

关键词：

D O I：

10.1016/S0042-207X(98)00283-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride (SiNx) films were prepared using an organosilicon monomer, Trisdimethyl-aminosilane ((Me2N)(3)SiH. TDMAS) by a remote plasma CVD. Plasma was generated by a mixture of hydrogen and nitrogen gases while the monomer was introduced into the downstream. Deposition of SiNx films were initiated by hydrogen radicals since no film deposition was observed in the absence of hydrogen radicals. The deposited films were contaminated with a small amount of carbon atoms for the substrate temperature over 400 degrees C, It is proposed hat at the initial step, Si-N or N-C bonds of the monomer are broken by hydrogen radicals. Furthermore, N atoms in the films are assumed to be originated from the plasma. (C) 1998 Elsevier Science Ltd. All rights reserved.

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页码：747 / 750

页数：4

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