A proposed organic-silica film for inter-metal-dielectric application

被引：17

作者：

Sugahara, S ^{[1
]}

Usami, K ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 3A期

关键词：

inter-metal-dielectric; low-k; organic silica; alkylene group; oxidation; ab-initio molecular orbital method; liquid phase deposition;

D O I：

10.1143/JJAP.38.1428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An organic-silica film has been proposed, where a short alkylene group is substituted for an oxygen atom in the silicon-dioxide matrix structure. This film is expected to have not only low dielectric constant but also good thermal conductivity and adhesion strength. The ab-initio molecular orbital calculation reveals that oxidation resistance is improved in the film. Preliminary experimental results are also presented.

引用

页码：1428 / 1432

页数：5

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