Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions -: art. no. 111105

被引：66

作者：

Löffler, A

Reithmaier, JP

Sek, G

Hofmann, C

Reitzenstein, S

Kamp, M

Forchel, A

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期

关键词：

D O I：

10.1063/1.1880446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical-emitting AlAs/GaAs microcavity pillars with a type of GaInAs quantum dots within a one lambda cavity have been realized based on high reflectivity distributed Bragg reflectors. High-quality factors were achieved due to an improved fabrication technology with a maximum quality factor of 27 700 for a micropillar with a diameter of 4 mu m. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga0.7In0.3As nucleation layer. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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