Near-field spectroscopy of single quantum dots at room temperature

被引:4
作者
Ikeda, K
Matsuda, K
Saito, H
Nishi, K
Saiki, T
机构
[1] Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] NEC Corp Ltd, Tsukuba, Ibaraki 3058501, Japan
[3] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan
来源
JOURNAL OF MICROSCOPY-OXFORD | 2001年 / 202卷
关键词
double-tapered optical fibre probe; emission linewidth; illumination-collection mode; inter-level spacing; near-field scanning optical microscopy; photoluminescence; quantum dot;
D O I
10.1046/j.1365-2818.2001.00814.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
The observation of photoluminescence spectra of self-assembled single InGaAs quantum dots at room temperature was performed under weak excitation conditions using a near-field scanning optical microscope. Operation in illumination-collection mode with a highly sensitive double-tapered optical fibre probe enabled detection of weak photoluminescence signals at room temperature with high efficiency and high spatial resolution. Each single quantum dot was imaged with a spatial resolution of about 250 nm, which corresponded to a quarter of the wavelength of the photoluminescence from quantum dots. The photoluminescence yields of individual quantum dots were widely distributed and were found to decrease with photoluminescence energy. This result serves as a clue to be pursued for better understanding of the thermal excitation of the carrier from confined states in quantum dots.
引用
收藏
页码:209 / 211
页数:3
相关论文
共 7 条
[1]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[2]   Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope [J].
Matsuda, K ;
Saiki, T ;
Saito, H ;
Nishi, K .
APPLIED PHYSICS LETTERS, 2000, 76 (01) :73-75
[3]   Structural and optical characterization of InAs/InGaAs self-assembled quantum dots grown on (311)B GaAs [J].
Nishi, K ;
Mirin, R ;
Leonard, D ;
MedeirosRibeiro, G ;
Petroff, PM ;
Gossard, AC .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3466-3470
[4]  
Saiki T, 1996, APPL PHYS LETT, V68, P2612, DOI 10.1063/1.116198
[5]   Near-field optical fiber probe optimized for illumination-collection hybrid mode operation [J].
Saiki, T ;
Matsuda, K .
APPLIED PHYSICS LETTERS, 1999, 74 (19) :2773-2775
[6]   Efficient carrier relaxation mechanism in InGaAs GaAs self-assembled quantum dots based on the existence of continuum states [J].
Toda, Y ;
Moriwaki, O ;
Nishioka, M ;
Arakawa, Y .
PHYSICAL REVIEW LETTERS, 1999, 82 (20) :4114-4117
[7]   Electronic structure and magneto-optics of self-assembled quantum dots [J].
Wojs, A ;
Hawrylak, P ;
Fafard, S ;
Jacak, L .
PHYSICAL REVIEW B, 1996, 54 (08) :5604-5608