Efficient carrier relaxation mechanism in InGaAs GaAs self-assembled quantum dots based on the existence of continuum states

被引：343

作者：

Toda, Y ^{[1
]}

Moriwaki, O ^{[1
]}

Nishioka, M ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.82.4114

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Comparison of near-field and far-field photoluminescence excitation (PLE) spectra gives new insight into the carrier relaxation process in InGaAs/GaAs self-assembled quantum dots. The near-field PLE spectra of single quantum dots clearly show 2D-like continuum states and a number of sharp lines, between a large zero-absorption region due to the quasi-0D density of states and the 2D wetting layer absorption edge. The results reveal an efficient intradot relaxation mechanism, proceeding as follows: The carriers can relax easily within continuum states, and make transitions to the excitonic ground state by resonant emission of localized phonons.

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页码：4114 / 4117

页数：4

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