Tunable intersublevel transitions in self-forming semiconductor quantum dots

被引：109

作者：

Leon, R

Fafard, S

Piva, PG

Ruvimov, S

Liliental-Weber, Z

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.R4262

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interfacial compositional disordering in In0.6Ga0.4As/GaAs quantum dots has been used to tune their intersublevel energy spacings (Delta E[(i+1-i])). Interdiffusion blueshifted all levels while lowering values for Delta E[(i+1-i]). Rate equation simulations of photoluminescence (PL) spectra estimated relaxation lifetime ratios for intersublevel transitions. A slight trend towards increasing thermalization rates at values Delta E[(i+1-i]) similar to LO phonon energies was found. However, PL measurements showed strong emission from excited states for all Delta E[(i+1-i]) values, which ranged from 53 to 25 meV.

引用

页码：R4262 / R4265

页数：4

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