Characterization of SiC using synchrotron white beam X-ray topography

被引：34

作者：

Dudley, M ^{[1
]}

Huang, XR ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

defects; micropipe; screw dislocation; synchrotron topography;

D O I：

10.4028/www.scientific.net/MSF.338-342.431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A short review of recent synchrotron white beam X-ray topography (SWBXT) studies of defects in 4H and 6H SiC is presented. Defects observed include closed-core and hollow-core screw dislocations (micropipes) in 6H and 4H, deformation induced basal plane dislocations in 6H and 4H, and small angle boundaries in 4H. These studies include the analysis of the relationship between hollow-core diameter and the Burgers vector for micropipes using SWBXT and scanning electron microscopy (SEM), the principles of a set of SWBXT techniques and associated simulations for characterizing micropipes and closed-core screw dislocations, and the nucleation mechanism of micropipes obtained using SWBXT in combination with other techniques.

引用

页码：431 / 436

页数：6

共 14 条

[11] Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p+n junction diodes -: Part I:: DC properties [J].

Neudeck, PG ;

Huang, W ;

Dudley, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :478-484

[12]

NEUROTH G, 1996, THESIS U BONN GERMAN

[13] Experimental studies of hollow-core screw dislocations in 6H-SiC and 4H-SiC single crystals [J].

Si, W ;

Dudley, M ;

Glass, R ;

Tsvetkov, V ;

Carter, CH .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :429-432

[14] Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank's theory [J].

Si, WM ;

Dudley, M ;

Glass, R ;

Tsvetkov, V ;

Carter, C .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :128-133

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