Mobility and saturation velocity in graphene on SiO2

被引：420

作者：

Dorgan, Vincent E. ^{[1
]}

Bae, Myung-Ho ^{[1
]}

Pop, Eric ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 08期

关键词：

TRANSPORT; TRANSISTORS; MODEL;

D O I：

10.1063/1.3483130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (similar to 1 V/mu m). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10(12) cm(-2). Saturation velocity is >3x10(7) cm/s at low carrier density, and remains greater than in Si up to 1.2x10(13) cm(-2). Transport appears primarily limited by the SiO2 substrate but results suggest intrinsic graphene saturation velocity could be more than twice that observed here. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483130]

引用

页数：3

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