Spatially resolved spectroscopy of monolayer graphene on SiO2

被引：206

作者：

Deshpande, A. ^{[1
]}

Bao, W. ^{[2
]}

Miao, F. ^{[2
]}

Lau, C. N. ^{[2
]}

LeRoy, B. J. ^{[1
]}

机构：

[1] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA

[2] Univ Calif Riverside, Dept Phys, Riverside, CA 92521 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 20期

关键词：

defect states; electronic density of states; graphene; impurity states; monolayers; scanning tunnelling spectroscopy; silicon compounds; IMPURITY SCATTERING; TRANSPORT; NANOTUBES; SHEETS; PHASE; GAS;

D O I：

10.1103/PhysRevB.79.205411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO2 to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long-range intravalley scattering from intrinsic ripples in graphene and random-charged impurities. At low energy, we observe short-range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects, and the underlying SiO2 substrate.

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页数：6

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