Air-stable n-type organic thin-film transistor array and high gain complementary inverter on flexible substrate

被引：38

作者：

Fujisaki, Yoshihide ^{[1
]}

Nakajima, Yoshiki ^{[1
]}

Kumaki, Daisuke ^{[1
]}

Yamamoto, Toshihiro ^{[1
]}

Tokito, Shizuo ^{[1
]}

Kono, Takahiro ^{[2
]}

Nishida, Jun-ichi ^{[2
]}

Yamashita, Yoshiro ^{[2
]}

机构：

[1] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

[2] Tokyo Inst Technol, Dept Elect Chem, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 13期

关键词：

PERFORMANCE; STABILITY; SEMICONDUCTORS; ELECTRON;

D O I：

10.1063/1.3491815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Air-stable n-type organic thin-film transistor (TFT) arrays and a complementary inverter circuit were fabricated on a flexible substrate. A benzobis(thiadiazole) (BBT) derivative-based TFT showed excellent air-stability and performances such as an electron mobility of over 0.1 cm(2)/V s, a large ON/OFF ratio over 108 when combined with a cross-linkable olefin-type polymer gate dielectric. In addition, an organic complementary inverter that combined the BBT derivative and a pentacene TFT demonstrated a sharp switching behavior and a high gain of over 150. We attribute these excellent characteristics to a combination of the low-lying lowest unoccupied molecular orbital level of n-type semiconductor material and the low interface trap of the gate dielectric. (C) 2010 American Institute of Physics. [doi:10.1063/1.3491815]

引用

页数：3

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