Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

被引：22

作者：

Byun, Ki Yeol ^{[1
]}

Fleming, Pete ^{[2
]}

Bennett, Nick ^{[3
]}

Gity, Farzan ^{[1
]}

McNally, Patrick ^{[3
]}

Morris, Michael ^{[1
,4
]}

Ferain, Isabelle ^{[1
]}

Colinge, Cindy ^{[1
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[2] Univ Coll Cork, Environm Res Inst, Cork, Ireland

[3] Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland

[4] Univ Coll Cork, Dept Chem, Cork, Ireland

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

基金：

爱尔兰科学基金会;

关键词：

D O I：

10.1063/1.3601355

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]

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页数：5

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