Low temperature germanium to silicon direct wafer bonding using free radical exposure

被引：41

作者：

Byun, Ki Yeol ^{[1
]}

Ferain, Isabelle ^{[1
]}

Fleming, Pete ^{[2
]}

Morris, Michael ^{[1
,3
]}

Goorsky, Mark ^{[4
]}

Colinge, Cindy ^{[1
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[2] Univ Coll Cork, Environm Res Inst, Cork, Ireland

[3] Univ Coll Cork, Dept Chem, Cork, Ireland

[4] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

基金：

爱尔兰科学基金会;

关键词：

ACTIVATION; SUBSTRATE;

D O I：

10.1063/1.3360201

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3360201]

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页数：3

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