In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen

被引：131

作者：

Molle, Alessandro ^{[1
]}

Bhuiyan, Md. Nurul Kabir ^{[1
]}

Tallarida, Grazia ^{[1
]}

Fanciulli, Marco ^{[1
]}

机构：

[1] CNR, Lab Nazl MDM, INFM, I-20041 Agrate Brianza, Milano, Italy

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2337543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The exposure of Ge(001) substrates to atomic oxygen was studied in situ to establish the stability of the germanium oxide. After preparing chemically clean and atomically flat Ge(001) surfaces, the Ge samples were exposed to atomic oxygen in a wide temperature range from room temperature to 400 degrees C. The chemical composition of the so-formed oxides was studied by means of x-ray photoelectron spectroscopy, while the structure was observed by reflection high energy electron diffraction. At low substrate temperatures the atomic oxygen is efficiently chemisorbed and suboxides coexist with the dioxide, which in turn is remarkably promoted in the high temperature range. (c) 2006 American Institute of Physics.

引用

页数：3

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