Study of the Ge Wafer Surface Hydrophilicity after Low-Temperature Plasma Activation

被引：24

作者：

Ma, Xiaobo ^{[1
,3
]}

Chen, Chao ^{[1
,3
]}

Liu, Weili ^{[1
]}

Liu, Xuyan ^{[1
,3
]}

Du, Xiaofeng ^{[1
,3
]}

Song, Zhitang ^{[1
]}

Lin, Chenglu ^{[1
,2
]}

机构：

[1] Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Nano Technol Lab, Shanghai 200050, Peoples R China

[2] Shanghai Simgui Technol Co Ltd, Shanghai 201821, Peoples R China

[3] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 05期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

SUBSTRATE;

D O I：

10.1149/1.3089363

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

070208 [无线电物理];

摘要：

Plasma activation has been investigated for its ability to induce a strong bonding energy even at low-temperature annealing. In this paper, Ge, Si, and SiO2 surface hydrophilicities with oxygen and nitrogen plasma activation are analyzed by contact angle measurement. Compared to wet chemical treatments, such as solutions containing ammonium hydroxide, the hydrophilicity of Ge wafer surface is strongly enhanced by O-2 or N-2 plasma activation. For germanium, a highly hydrophilic and smooth surface has been obtained by O-2 plasma activation only for 10 s. The contact angle measurements indicate that O-2 plasma is more remarkable than N-2 plasma in the same activation conditions. A higher surface roughness, which is only observed in the O-2 plasma activated sample, is decreased greatly after rinsing in deionized water. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3089363] All rights reserved.

引用

页码：H307 / H310

页数：4

共 14 条

[1]

Germanium-on-insulator (GeOI) substrates - A novel engineered substrate for future high performance devices [J].