High gain GaN/AlGaN heterojunction phototransistor

被引：62

作者：

Yang, W ^{[1
]}

Nohava, T ^{[1
]}

Krishnankutty, S ^{[1
]}

Torreano, R ^{[1
]}

McPherson, S ^{[1
]}

Marsh, H ^{[1
]}

机构：

[1] Honeywell Technol Ctr, Plymouth, MN 55441 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.122058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN/A1GaN heterojunction bipolar phototransistor with gain in excess of 10(5) was demonstrated. From 360 to 400 nm, an eight orders of magnitude drop in responsivity was achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no de drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN-based photoconductors. (C) 1998 American Institute of Physics.

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页码：978 / 980

页数：3

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